Time-dependent dielectric breakdown (TDDB) is one of the most important reliability issues in Cu/low-k technology development. With continuous technology scalings to nanometer scales. TDDB issue is further exacerbated. In this paper. https://www.hindigyanvishv.com/hot-super-No-Dream-Vinyl-LP-mega-pick/
Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
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